SI2307BDS-T1-GE3

Не рекомендуется для новых проектов
SI2307BDS-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, 30V, 2.5A, 78mR, SOT-23-3, Small Signal
Производитель Vishay(Siliconix)
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

P-channel MOSFET, ideal for general-purpose small signal applications. Features a continuous drain current of 2.5A and a drain-to-source voltage of -30V. Offers a low Rds(on) of 78mR, ensuring efficient operation. Packaged in a compact SOT-23-3 surface-mount case, it operates across a wide temperature range of -55°C to 150°C. This component is RoHS compliant and supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.02mm
Length 3.04mm
Series TrenchFET®
Weight 0.050717oz
Polarity P-CHANNEL
Fall Time 12ns
Packaging Tape and Reel
Rds On Max 78mR
Termination SMD/SMT
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 380pF
Number of Channels 1
Turn-On Delay Time 9ns
Dual Supply Voltage 30V
Radiation Hardening No
Turn-Off Delay Time 25ns
Reach SVHC Compliant Yes
Max Power Dissipation 750mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 78mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.5A
Drain to Source Voltage (Vdss) -30V

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