SI2307CDS-T1-E3

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SI2307CDS-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, 30V, 2.7A, SOT-23-3, Small Signal
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel, general-purpose small-signal MOSFET in a SOT-23-3 surface-mount package. Features a 30V drain-source voltage, 2.7A continuous drain current, and 88mΩ maximum drain-source on-resistance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1.8W. Includes a 20V gate-source voltage rating and typical turn-on/fall times of 40ns. RoHS compliant and supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.02mm
Length 3.04mm
Series TrenchFET®
Weight 0.050717oz
Polarity P-CHANNEL
Fall Time 40ns
Packaging Tape and Reel
Rds On Max 88mR
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 340pF
Number of Channels 1
Turn-On Delay Time 40ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Max Power Dissipation 1.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 880mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.7A
Drain to Source Voltage (Vdss) 30V

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