SI2308BDS-T1-E3
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N-CH MOSFET, 60V, 1.9A, 156mR, SOT-23
Дополнительная информация
N-channel MOSFET, TO-236 package, offering 60V drain-to-source breakdown voltage and 1.9A continuous drain current. Features a low 156mΩ drain-to-source on-resistance and 1V threshold voltage. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 1.66W. Ideal for general-purpose small signal applications, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 16ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 156mR |
| Package/Case | SOT-23-3 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 190pF |
| Power Dissipation | 1.09W |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.66W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 156mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 156MR |
| Drain to Source Breakdown Voltage | 60V |
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