SI2308BDST1GE3
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Краткое описание:
SOT-23 N-Channel MOSFET 1.9A 60V 156mR 1.09W
Дополнительная информация
The SI2308BDST1GE3 is a surface mount N-channel MOSFET from Vishay, packaged in a SOT-23 case. It can handle a continuous drain current of 1.9A and a drain-source voltage of 60V. The device has a maximum drain-source on resistance of 156 milliohms and a maximum power dissipation of 1.09W. The operating temperature range is from -55°C to 150°C. The MOSFET is lead free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Lead Free | Lead Free |
| Nominal Vgs | 3V |
| Package/Case | SOT-23 |
| Input Capacitance | 190pF |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.09W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 156mR |
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