SI2308DS-T1-E3
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N-Ch MOSFET, 60V, 2A, 160mR, SOT-23-3
Дополнительная информация
N-Channel MOSFET, SOT-23-3 package, offering a continuous drain current of 2A and a maximum drain-source voltage of 60V. Features low drain-source on-resistance (Rds On) of 160mR. Operates with a gate-source voltage up to 20V and a threshold voltage of 3V. Includes fast switching characteristics with turn-on delay time of 7ns and fall time of 10ns. Maximum power dissipation is 1.25W, with operating temperatures from -55°C to 150°C. Surface mount component, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 160mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 240pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 160mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 160mR |
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