SI2309DS-T1-E3
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Краткое описание:
P-Channel MOSFET, 60V, 1.25A ID, 340mR RdsOn, SOT-23
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a 60V drain-source breakdown voltage and a maximum continuous drain current of 1.25A. Offers a low drain-source on-resistance of 340mΩ. Operates within a temperature range of -55°C to 150°C and is packaged in a surface-mount SOT-23-3 (TO-236) package, supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Current | 12A |
| Voltage | 60V |
| Polarity | P-CHANNEL |
| Fall Time | 11.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 340mR |
| Package/Case | SOT-23-3 |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.25W |
| Number of Channels | 1 |
| Turn-On Delay Time | 10.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15.5ns |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 340mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.25A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 340mR |
| Drain to Source Breakdown Voltage | -60V |
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