SI2311DS-T1-E3
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Краткое описание:
P-CH MOSFET 8V 3A SOT-23 45mR RdsOn
Дополнительная информация
P-channel MOSFET in SOT-23-3 package, featuring 8V drain-source voltage and 3A continuous drain current. Offers low 45mΩ drain-source resistance and 8V gate-source voltage. Designed for surface mounting with fast switching times, including 18ns turn-on delay and 45ns fall time. Maximum power dissipation is 710mW, operating from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 45ns |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 970pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 18ns |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 710mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 8V |
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