SI2312BDS-T1-E3
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Краткое описание:
N-Channel Si JFET, 20V, 3.9A, 31mR RdsOn, SOT-23-3
Дополнительная информация
N-channel MOSFET, surface mount, SOT-23-3 package. Features 3.9A continuous drain current and 20V drain-to-source breakdown voltage. Offers low 31mΩ drain-to-source on-resistance. Operates from -55°C to 150°C with 750mW maximum power dissipation. Includes fast switching times with 9ns turn-on and 10ns fall times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 31mR |
| Nominal Vgs | 850mV |
| Termination | SMD/SMT |
| Package/Case | SOT-23-3 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 750mW |
| Threshold Voltage | 850mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 31mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 31mR |
| Drain to Source Breakdown Voltage | 20V |
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