SI2315BDS-T1-E3
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Краткое описание:
P-CH JFET, 12V, 3A, 50mR, TO-236-3, SMD
Дополнительная информация
P-channel, small-signal MOSFET for general-purpose applications. Features a 12V drain-source breakdown voltage and a continuous drain current of 3A. Offers a low drain-source on-resistance of 50mΩ (max) and a gate-source voltage of 8V. Packaged in a TO-236-3 surface-mount configuration, this device operates from -55°C to 150°C with a maximum power dissipation of 750mW. Includes fast switching times with a turn-on delay of 15ns and a fall time of 35ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Current | 3A |
| Voltage | 12V |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Nominal Vgs | -900mV |
| Termination | SMD/SMT |
| Package/Case | TO-236-3 |
| Package Quantity | 3000 |
| Input Capacitance | 715pF |
| Power Dissipation | 750mW |
| Threshold Voltage | -900mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | -12V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 50mR |
| Drain to Source Breakdown Voltage | 12V |
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