SI2316BDS-T1-E3
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Краткое описание:
N-CH MOSFET 30V 3.9A SOT-23 50mR
Дополнительная информация
N-channel MOSFET, surface mount, SOT-23-3 package. Features 30V drain-source breakdown voltage, 3.9A continuous drain current, and 50mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 20V, offering a maximum power dissipation of 1.25W. Includes 20ns turn-on delay and 65ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Package/Case | SOT-23-3 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 1.25W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50mR |
| Drain to Source Breakdown Voltage | 30V |
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