SI2316BDS-T1-GE3
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N-CH MOSFET, 30V, 4.5A, 50mR, SOT-23-3
Дополнительная информация
N-channel MOSFET, surface mount, in a SOT-23-3 package. Features 30V drain-source voltage, 4.5A continuous drain current, and 50mΩ drain-source on-resistance. Operates from -55°C to 150°C with a 3V threshold voltage. Includes 20V gate-to-source voltage, 1.25W max power dissipation, and 350pF input capacitance. RoHS compliant with fast switching times including 20ns turn-on delay and 11ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50MR |
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