SI2316DS-T1-E3
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Краткое описание:
N-Ch MOSFET, 30V, 50mR, 2.9A, SOT-23-3, SM
Дополнительная информация
Single N-Channel Power MOSFET, featuring 30V drain-source voltage and 50mΩ maximum drain-source on-resistance. This surface mount component offers a continuous drain current of 2.9A and a maximum power dissipation of 700mW. It operates within a temperature range of -55°C to 150°C and is packaged in a SOT-23-3 (TO-236) case. Key switching characteristics include a 9ns turn-on delay and a 9ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Current | 2A |
| Voltage | 30V |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Nominal Vgs | 800mV |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 215pF |
| Power Dissipation | 700mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50mR |
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