SI2318DS-T1-E3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
N-Channel MOSFET, 40V, 3A, 45mR Rds(on), TO-236 SM
Дополнительная информация
N-channel MOSFET, TO-236 package, ideal for general-purpose small signal applications. Features a continuous drain current of 3A and a drain-source breakdown voltage of 40V. Offers a low drain-source on-resistance of 45mΩ and a threshold voltage of 3V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 750mW. This surface-mount component is RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Nominal Vgs | 3V |
| Package/Case | TO-236 |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 540pF |
| Power Dissipation | 750mW |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 45mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
