SI2323CDS-T1-GE3
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Краткое описание:
P-CH JFET, -20V, -6A, 39mR Rds(on), SOT-23-3
Дополнительная информация
P-channel MOSFET, general purpose small signal transistor, featuring a -20V Drain-Source Voltage (Vdss) and -6A Continuous Drain Current (ID). Offers a low Drain-Source On Resistance (Rds On) of 32mR. Packaged in a compact SOT-23-3 surface mount case, this device operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 2.5W. Includes fast switching characteristics with a 15ns turn-on delay and 12ns fall time. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 39mR |
| Nominal Vgs | -400mV |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.09nF |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | -6A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 39mR |
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