SI2323DS-T1-E3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
P-CH MOSFET, 20V, 3.7A, 39mR RdsOn, SOT-23-3
Дополнительная информация
P-channel MOSFET, surface mount, SOT-23-3 package. Features 3.7A continuous drain current, -20V drain-source breakdown voltage, and 39mΩ maximum drain-source on-resistance. Operates from -55°C to 150°C with 750mW power dissipation. Includes 25ns turn-on delay and 71ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 43ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 39mR |
| Nominal Vgs | -1V |
| Package/Case | SOT-23-3 |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.02nF |
| Power Dissipation | 750mW |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 71ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 39mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 39mR |
| Drain to Source Breakdown Voltage | -20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
