SI2323DS-T1-GE3
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Краткое описание:
P-Channel JFET, 20V, 3.7A, SOT-23-3, Surface Mount
Дополнительная информация
P-channel MOSFET, general purpose small signal transistor in a SOT-23-3 surface mount package. Features a continuous drain current of 3.7A, drain-source voltage of -20V, and a maximum drain-source on-resistance of 39mR. Operates with a gate-source voltage of 8V and a threshold voltage of -1V. Offers fast switching with turn-on delay time of 25ns and fall time of 43ns. This component is RoHS compliant and designed for operation between -55°C and 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 43ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 39mR |
| Nominal Vgs | -1V |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.02nF |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 71ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 39mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 39mR |
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