SI2325DS-T1-E3
Производится
Увеличить
Краткое описание:
P-Channel JFET, 150V, 530mA, 1.2 Ohm, SOT-23
Дополнительная информация
P-channel, general-purpose small-signal MOSFET with a continuous drain current of 530mA and a drain-source voltage of -150V. Features a maximum drain-source on-resistance of 1.2 Ohms and a gate-source voltage of 20V. This surface-mount component, housed in a SOT-23-3 package, offers a maximum power dissipation of 750mW and operates within a temperature range of -55°C to 150°C. Input capacitance is 510pF.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 510pF |
| Power Dissipation | 750mW |
| Threshold Voltage | -4.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 530mA |
| Drain to Source Voltage (Vdss) | -150V |
| Drain-source On Resistance-Max | 1.2R |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
