SI2325DS-T1-GE3
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Краткое описание:
P-CH JFET, -150V Vds, 530mA Id, 1.2R Rds(on), SOT-23, SM
Дополнительная информация
P-Channel MOSFET, SOT-23 package, featuring a Drain to Source Voltage (Vdss) of -150V and a continuous Drain Current (ID) of 530mA. Offers a low Drain to Source Resistance (Rds On) of 1.2 Ohms at a nominal Gate to Source Voltage (Vgs) of -4.5V. Maximum power dissipation is 750mW, with operating temperatures ranging from -55°C to 150°C. This surface mount component is RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Nominal Vgs | -4.5V |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 510pF |
| Power Dissipation | 750mW |
| Threshold Voltage | -4.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 530mA |
| Drain to Source Voltage (Vdss) | -150V |
