SI2328DS-T1-E3
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Краткое описание:
N-CH JFET 100V 1.15A 250mR TO-236 SMT
Дополнительная информация
N-Channel TrenchFET® MOSFET, surface mountable in a TO-236 package. Features 100V drain-source breakdown voltage and 1.15A continuous drain current. Offers a low 250mΩ maximum drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 730mW. Includes fast switching characteristics with turn-on delay time of 7ns and fall time of 11ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 250mR |
| Nominal Vgs | 2V |
| Package/Case | TO-236 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 730mW |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 730mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.15A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 250mR |
| Drain to Source Breakdown Voltage | 100V |
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