SI2333CDS-T1-E3
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Краткое описание:
P-Channel JFET, 5.1A, -12V, 35mR, SOT-23-3, Surface Mount
Дополнительная информация
P-channel MOSFET for general-purpose small signal applications. Features a continuous drain current of 5.1A and a drain-source voltage of -12V. Offers a low drain-source on-resistance of 35mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in a SOT-23-3 surface-mount case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.225nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 35MR |
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