SI2333CDS-T1-GE3
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P-CH MOSFET, 12V, 5.1A, 35mR, SOT-23, Small Signal
Дополнительная информация
P-channel MOSFET, small signal, general purpose transistor in a SOT-23 package. Features a continuous drain current of 5.1A, drain-source voltage of -12V, and a maximum drain-source on-resistance of 35mR. Operates with a gate-source voltage of 8V and a nominal Vgs of -1V, with a threshold voltage of -400mV. Offers fast switching speeds with a turn-on delay of 13ns and fall time of 35ns. Rated for a maximum power dissipation of 2.5W and a maximum operating temperature of 150°C. Surface mountable and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Current | 71A |
| Voltage | 12V |
| Polarity | P-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Nominal Vgs | -1V |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.225nF |
| Power Dissipation | 1.25W |
| Threshold Voltage | -400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 35mR |
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