SI2333DDS-T1-GE3
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Краткое описание:
P-Channel JFET, -12V Vdss, -6A ID, 28mR Rds On, SOT-23
Дополнительная информация
P-Channel Silicon MOSFET, Surface Mount, SOT-23-3 package. Features -6A continuous drain current (ID) and -12V drain-to-source voltage (Vdss). Offers 28mΩ drain-to-source resistance (Rds On Max) and 1.7W max power dissipation. Operates from -55°C to 150°C with 1.275nF input capacitance. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.275nF |
| Threshold Voltage | 400mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 45ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | -6A |
| Drain to Source Voltage (Vdss) | -12V |
