SI2333DS-T1-E3
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Краткое описание:
P-CH JFET, 4.1A, -12V, 32mR, TO-236, Small Signal
Дополнительная информация
P-channel MOSFET, TO-236 package, offering a continuous drain current of 4.1A and a drain-source breakdown voltage of -12V. Features a low drain-source on-resistance of 32mΩ, ideal for general-purpose small signal applications. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 750mW. Includes fast switching characteristics with turn-on delay of 25ns and fall time of 45ns. RoHS compliant and surface mountable.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 32mR |
| Nominal Vgs | -1V |
| Package/Case | TO-236 |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.1nF |
| Power Dissipation | 750mW |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 72ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 32mR |
| Drain to Source Breakdown Voltage | -12V |
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