SI2337DS-T1-E3
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P-Channel MOSFET, 80V, 1.2A, 270mR, SOT-23-3
Дополнительная информация
P-channel, small-signal MOSFET for general-purpose applications. Features a -80V drain-source voltage (Vdss) and 1.2A continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 270mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Packaged in a SOT-23-3 surface-mount case, this RoHS-compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 270mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 500pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | -80V |
| Drain-source On Resistance-Max | 270mR |
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