SI2337DS-T1-GE3
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Краткое описание:
P-CH MOSFET 80V 1.2A SOT-23 270mR
Дополнительная информация
P-Channel MOSFET, 80V Vdss, 1.2A continuous drain current, and 270mR Rds On Max. This surface mount component features a SOT-23-3 package, 760mW power dissipation, and operates from -55°C to 150°C. Key electrical characteristics include 500pF input capacitance, 12ns fall time, 15ns turn-on delay, and 20ns turn-off delay. It is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 270mR |
| Nominal Vgs | -4V |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 500pF |
| Power Dissipation | 760mW |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 760mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | -80V |
| Drain-source On Resistance-Max | 270MR |
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