SI2343DS-T1-E3
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Краткое описание:
P-CH JFET, 30V, 3.1A, 53mR Rds(on), SOT-23
Дополнительная информация
P-channel MOSFET, general purpose small signal transistor, features a 3.1A continuous drain current and a -30V drain-to-source voltage. Surface mountable in a SOT-23 package, it offers a low 53mΩ drain-source on-resistance. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 750mW. Key switching characteristics include a 10ns turn-on delay and a 15ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 53mR |
| Nominal Vgs | -1V |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 540pF |
| Power Dissipation | 750mW |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 53mR |
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