SI2343DS-T1-GE3
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Краткое описание:
P-CH JFET, 30V, 3.1A, 53mR Rds(on), SOT-23-3
Дополнительная информация
P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 3.1A and a drain-source voltage of -30V. Offers a low drain-source on-resistance (Rds On) of 53mR. Packaged in a compact SOT-23-3 surface-mount case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 53mR |
| Nominal Vgs | -3V |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 540pF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 750mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 53mR |
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