SI2365EDS-T1-GE3
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Краткое описание:
P-Channel JFET, -5.9A ID, -20V Vdss, 32mR Rds On, TO-236
Дополнительная информация
P-Channel Silicon MOSFET, TO-236 package, offering a continuous drain current of -5.9A and a drain-to-source voltage of -20V. Features low on-resistance of 32mR, a threshold voltage of -1V, and a maximum power dissipation of 1.7W. Operates across a temperature range of -55°C to 150°C, with fast switching characteristics including a 9µs turn-on delay and 21µs fall time. This surface-mount device is RoHS compliant and supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 21us |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 32mR |
| Package/Case | TO-236 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 9us |
| Turn-Off Delay Time | 62us |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | -1V |
| Continuous Drain Current (ID) | -5.9A |
| Drain to Source Voltage (Vdss) | -20V |
