SI2374DS-T1-GE3
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Краткое описание:
N-Channel JFET, 20V, 5.9A ID, 25mR Rds(on), SOT-23
Дополнительная информация
N-Channel Silicon FET, 20V Drain-Source Voltage, 5.9A Continuous Drain Current, and 25mΩ Drain-to-Source Resistance. This surface-mount device features a 1V threshold voltage and operates within a -55°C to 150°C temperature range. With a 1.7W maximum power dissipation and 735pF input capacitance, it offers fast switching with 4ns turn-on and 9ns fall times. Packaged in a 3-lead SOT-23, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 735pF |
| Threshold Voltage | 1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 4ns |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 5.9A |
| Drain to Source Voltage (Vdss) | 20V |
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