SI2399DS-T1-GE3
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Краткое описание:
P-CH MOSFET 20V -6A SOT-23 28mR TrenchFET
Дополнительная информация
P-channel MOSFET, 20V Drain-Source Voltage (Vdss), -6A Continuous Drain Current (ID), and 28mΩ Drain-Source On-Resistance (Rds On). Features a 3-pin SOT-23 package for surface mounting, with a maximum power dissipation of 2.5W and an operating temperature range of -55°C to 150°C. Includes 835pF input capacitance and fast switching times with a 9ns fall time, 22ns turn-on delay, and 28ns turn-off delay. Packaged in tape and reel, this RoHS compliant component offers a nominal gate-source threshold voltage of -600mV.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Nominal Vgs | -600mV |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 835pF |
| Threshold Voltage | -600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | -6A |
| Drain to Source Voltage (Vdss) | -20V |
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