SI3127DV-T1-GE3
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Краткое описание:
Junction Field-Effect Transistor, N-Channel, 13A, -60V, 60V, 20V, TSOP-6
Дополнительная информация
The SI3127DV-T1-GE3 is a surface mount junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 4.2W and a continuous drain current of 13A. The device is packaged in a halogen-free and RoHS compliant TSOP-6 package and is suitable for use in a variety of applications. The transistor has a drain to source breakdown voltage of -60V and a drain to source resistance of 74mR. It also features a turn-on delay time of 8ns and a turn-off delay time of 35ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| Series | TrenchFET® |
| Packaging | Cut Tape |
| Rds On Max | 89mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Input Capacitance | 833pF |
| Power Dissipation | 2W |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 4.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 74mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
