SI3407DV-T1-GE3

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SI3407DV-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH JFET -20V, 7.5A, 24mR Rds On, TSOP
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel MOSFET, surface mount, in a TSOP package. Features a -20V Drain-to-Source Voltage (Vdss) and a continuous drain current of 7.5A. Offers a low Drain-Source On-Resistance (Rds On) of 24mR. Operates with a nominal Gate-to-Source Voltage (Vgs) of -1.5V and has an input capacitance of 1.67nF. Maximum power dissipation is 4.2W, with an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 24mR
Nominal Vgs -1.5V
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 1.67nF
Threshold Voltage -1.5V
Number of Channels 1
Radiation Hardening No
Reach SVHC Compliant No
Max Power Dissipation 4.2W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 24mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 7.5A
Drain to Source Voltage (Vdss) -20V
Drain-source On Resistance-Max 24mR

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