SI3410DV-T1-GE3
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Краткое описание:
N-Channel Power MOSFET, 30V, 8A, 19.5mR, TSOP
Дополнительная информация
N-channel power MOSFET with 30V drain-source voltage and 8A continuous drain current. Features low 19.5mΩ drain-to-source resistance and 2W maximum power dissipation. Operates from -55°C to 150°C, with a nominal gate-source voltage of 3V and a threshold voltage of 3V. Packaged in a TSOP surface-mount case, this RoHS compliant component offers fast switching with turn-on delay of 21ns and fall time of 9ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 19.5mR |
| Nominal Vgs | 3V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.295nF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
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