SI3430DV-T1-E3
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Краткое описание:
N-CH MOSFET 100V 1.8A 170mR TSOP Surface Mount
Дополнительная информация
N-channel MOSFET transistor with 100V drain-source breakdown voltage and 1.8A continuous drain current. Features a low 170mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. This surface-mount component is housed in a 6-pin TSOP package, offering fast switching speeds with turn-on delay of 9ns and fall time of 11ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | SI3 |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 170mR |
| Nominal Vgs | 2V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.14W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 170mR |
| Drain to Source Breakdown Voltage | 100V |
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