SI3430DV-T1-GE3
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N-Channel JFET, 100V, 2.4A, 170mR, TSOP, Surface Mount
Дополнительная информация
N-channel small signal MOSFET for general-purpose applications. Features 100V drain-source voltage (Vdss) and 2.4A continuous drain current (ID). Offers low 170mR drain-to-source on-resistance (Rds On Max) and fast switching times with 9ns turn-on delay and 16ns turn-off delay. Packaged in a compact TSOP surface-mount case, this component operates from -55°C to 150°C with a maximum power dissipation of 1.14W. RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Packaging | Tape and Reel |
| Rds On Max | 170mR |
| Nominal Vgs | 2V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 100V |
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