SI3433BDV-T1-E3

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SI3433BDV-T1-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 20V 4.3A 42mR TSOP
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

P-channel MOSFET with 20V drain-source voltage and 4.3A continuous drain current. Features low 42mΩ drain-source on-resistance and 1.1W maximum power dissipation. Operates across a -55°C to 150°C temperature range, with fast switching times including 15ns turn-on delay. Packaged in TSOP for surface mounting, this RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity P-CHANNEL
Fall Time 45ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 42mR
Nominal Vgs -450mV
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Threshold Voltage -450mV
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 80ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 42mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4.3A
Drain to Source Voltage (Vdss) -20V
Drain-source On Resistance-Max 42mR

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