SI3434DV-T1-E3
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Краткое описание:
N-CH JFET, 30V, 4.6A, 34mR Rds(on), TSOP
Дополнительная информация
N-channel, small-signal MOSFET in a TSOP package, designed for general-purpose applications. Features a continuous drain current of 4.6A and a drain-to-source breakdown voltage of 30V. Offers a low drain-source on-resistance of 34mΩ at a nominal gate-source voltage of 600mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. This surface-mount component boasts fast switching times, including a turn-on delay of 21ns and a fall time of 30ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Nominal Vgs | 600mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.14W |
| Threshold Voltage | 600mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 34mR |
| Drain to Source Breakdown Voltage | 30V |
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