SI3437DV-T1-GE3

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SI3437DV-T1-GE3 - Vishay(Siliconix)
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Краткое описание: P-CH JFET, 150V, 1.1A, 750mR, TSOP, Small Signal
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel JFET for general-purpose small signal applications. Features a continuous drain current of 1.1A and a drain-to-source voltage of -150V. Offers a low Rds(on) of 750mR and a threshold voltage of -4V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.2W. Packaged in a compact TSOP surface-mount case, this component is halogen-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity P-CHANNEL
Fall Time 14ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 750mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 510pF
Threshold Voltage -4V
Number of Channels 1
Turn-On Delay Time 14ns
Radiation Hardening No
Turn-Off Delay Time 23ns
Reach SVHC Compliant No
Max Power Dissipation 3.2W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 750mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.1A
Drain to Source Voltage (Vdss) -150V

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