SI3440DV-T1-E3
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Краткое описание:
150V 1.2A N-CH JFET TSOP Surface Mount
Дополнительная информация
N-Channel MOSFET, 150V Drain-Source Voltage (Vdss), 1.2A Continuous Drain Current (ID). Features 375mR maximum Drain-Source On Resistance (Rds On Max) and 1.14W maximum Power Dissipation. Operates with a 4V nominal Gate-Source Voltage (Vgs) and a 20V maximum Gate-Source Voltage. This surface mount component is housed in a TSOP package, with a 15ns fall time and 8ns turn-on delay time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 375mR |
| Nominal Vgs | 4V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.14W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 375mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 375mR |
| Drain to Source Breakdown Voltage | 150V |
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