SI3441BDV-T1-E3
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Краткое описание:
P-CH MOSFET 20V 2.45A 90mR TSOP
Дополнительная информация
P-channel MOSFET, 20V Drain-Source Voltage (Vdss), 2.45A Continuous Drain Current (ID). Features 90mΩ maximum Drain-Source On Resistance (Rds On) and 860mW power dissipation. Surface mount TSOP package with 55ns fall time and 15ns turn-on delay. Operating temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3mm |
| Height | 0.039inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Nominal Vgs | -850mV |
| Termination | SMD/SMT |
| Package/Case | TSOP |
| Polarization | P |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 860mW |
| Threshold Voltage | -850mV |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | -20V |
| On-State Resistance | 130mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 860mW |
| Reverse Recovery Time | 50ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.45A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90mR |
| Drain to Source Breakdown Voltage | 20V |
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