SI3442CDV-T1-GE3
Производится
Увеличить
Краткое описание:
N-CH MOSFET, 20V, 8A, 27mR, TSOP, Surface Mount
Дополнительная информация
N-channel MOSFET with 20V Drain-Source Voltage (Vdss) and 8A Continuous Drain Current (ID). Features low 27mR Drain-to-Source Resistance (Rds On Max) and 600mV Threshold Voltage. Packaged in a compact 1mm high, 3.1mm long, 1.7mm wide TSOP for surface mounting. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.7W. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3.1mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 27mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 335pF |
| Threshold Voltage | 600mV |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 27mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
