SI3443BDV-T1-E3
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Краткое описание:
P-CH JFET, 20V, 3.6A, 60mR, TSOP, Surface Mount
Дополнительная информация
P-channel, general-purpose small-signal MOSFET featuring a 3.6A continuous drain current and a -20V drain-source voltage. This surface-mount device offers a low 60mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. With a 1.1W maximum power dissipation and a TSOP package, it is designed for efficient switching applications. RoHS compliant with tin-matte contact plating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Nominal Vgs | -1.4V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Power Dissipation | 1.1W |
| Threshold Voltage | -1.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Moisture Sensitivity Level | 1 |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 60mR |
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