SI3445DV-T1-E3
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Краткое описание:
P-Channel MOSFET, 8V, 5.6A, 42mR, TSOP, Surface Mount
Дополнительная информация
P-Channel Power MOSFET, designed for general-purpose power applications. Features a -8V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 5.6A. Offers a low Drain-Source On-Resistance (Rds On) of 42mR at a nominal Vgs of -1V. Packaged in a compact TSOP surface-mount case with dimensions of 3.05mm (L) x 1.65mm (W) x 1mm (H). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 42mR |
| Nominal Vgs | -1V |
| Termination | SMD/SMT |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 3.15nF |
| Power Dissipation | 2W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | -8V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 42mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 42MR |
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