SI3446ADV-T1-E3
Снят с производства
Увеличить
Краткое описание:
N-Channel JFET, 20V, 5.8A, 37mR Rds(on), TSOP
Дополнительная информация
N-channel Si MOSFET, TrenchFET® series, for general-purpose small signal applications. Features 20V Drain-Source Voltage (Vdss) and 5.8A Continuous Drain Current (ID). Offers low 37mR Drain-Source On-Resistance (Rds On Max) and 640pF input capacitance. Packaged in a compact TSOP surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a 2W maximum power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 37mR |
| Nominal Vgs | 1.8V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 640pF |
| Threshold Voltage | 1.8V |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 37mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 37MR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
