SI3447CDV-T1-GE3
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Краткое описание:
P-CH JFET, 12V, 6.3A, 36mR RdsOn, TSOP, Surface Mount
Дополнительная информация
P-channel, general-purpose small-signal MOSFET designed for surface mount applications. Features a continuous drain current of 6.3A and a drain-source voltage of 12V. Offers a low drain-source on-resistance of 36mR, with turn-on and fall times of 20ns. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 3W. Packaged in a compact TSOP-6, tape and reel format, this component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 36mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 910pF |
| Power Dissipation | 2W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 36mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 36MR |
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