SI3454ADV-T1-E3
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Краткое описание:
N-Channel JFET, 30V, 3.4A, 60mR Rds(on), TSOP
Дополнительная информация
N-channel, small-signal MOSFET for general-purpose applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 3.4A. Offers a low drain-source on-resistance of 60mΩ. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact TSOP surface-mount case.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.067inch |
| Height | 0.039inch |
| Length | 0.122inch |
| Series | TrenchFET® |
| Current | 34A |
| Voltage | 30V |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | TSOP |
| Polarization | N |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.14W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 60mR |
| Drain to Source Breakdown Voltage | 30V |
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