SI3456DDV-T1-E3

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SI3456DDV-T1-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 5A 40mR TSOP Surface Mount
Производитель Vishay(Siliconix)
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET with 30V Drain-Source Voltage (Vdss) and 5A Continuous Drain Current (ID). Features low 40mΩ Drain-Source On-Resistance (Rds On Max) and 1.7W Power Dissipation. Operates from -55°C to 150°C, with 12ns Turn-On Delay Time and 13ns Fall Time. Packaged in a compact 6-pin TSOP for surface mounting.
RoHS Compliant
Mount Surface Mount
Width 1.65mm
Height 1mm
Length 3.05mm
Series TrenchFET®
Weight 0.000705oz
Polarity N-CHANNEL
Fall Time 13ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 40mR
Package/Case TSOP
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 325pF
Power Dissipation 1.7W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 16ns
Max Power Dissipation 2.7W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 40mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 40mR

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