SI3458BDV-T1-E3
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Краткое описание:
N-Channel JFET, 60V, 4.1A, 100mR, TSOP, Surface Mount
Дополнительная информация
N-channel Si JFET, general purpose small signal transistor in TSOP-6 package. Features 60V drain-source voltage (Vdss), 4.1A continuous drain current (ID), and 100mΩ drain-source on-resistance (Rds On). Operates with a nominal gate-source voltage (Vgs) of 3V, a threshold voltage of 3V, and a maximum gate-source voltage of 20V. Offers fast switching speeds with a turn-on delay time of 5ns and a fall time of 10ns. Maximum power dissipation is 2W, with operating temperatures from -55°C to 150°C. Surface mountable and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Nominal Vgs | 3V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | 60V |
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