SI3458BDV-T1-GE3
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Краткое описание:
N-Channel JFET, 60V, 3.2A, 100mR Rds(on), TSOP, Surface Mount
Дополнительная информация
N-channel, small-signal MOSFET for general-purpose applications. Features a 60V drain-source voltage and 3.2A continuous drain current. Offers a low 100mΩ drain-source on-resistance and 3.3W power dissipation. Packaged in a compact TSOP surface-mount case with dimensions of 3.05mm (L) x 1.65mm (W) x 1mm (H). Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Nominal Vgs | 3V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 3.3W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100mR |
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