SI3459BDV-T1-GE3
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Краткое описание:
P-CH JFET, -60V, 2.2A, 216mR, TSOP, Surface Mount
Дополнительная информация
P-channel, general-purpose small signal MOSFET in a TSOP package. Features a continuous drain current of 2.2A and a drain-to-source voltage of -60V. Offers a low on-resistance of 216mΩ, with fast switching speeds including a 5ns turn-on delay and 18ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 3.3W. This surface-mount component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 216mR |
| Nominal Vgs | -3V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 350pF |
| Power Dissipation | 2W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 216mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 216MR |
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